Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric
2012 ◽
Vol 33
(7)
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pp. 997-999
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2011 ◽
Vol 50
(4)
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pp. 04DF03
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2012 ◽
Vol 45
(4)
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pp. 045105
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