Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources

Author(s):  
S.-K. Ha ◽  
S. Bounouar ◽  
J. D. Song ◽  
J. Y. Lim ◽  
F. Donatini ◽  
...  
2011 ◽  
Author(s):  
S.-K. Ha ◽  
J. D. Song ◽  
J. Y. Lim ◽  
S. Bounouar ◽  
F. Donatini ◽  
...  

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1330-1333 ◽  
Author(s):  
Seung-Kyu Ha ◽  
Jin Dong Song ◽  
Su Youn Kim ◽  
Jung Il Lee ◽  
Samir Bounouar ◽  
...  

2006 ◽  
Vol 96 (11) ◽  
Author(s):  
Wen-Hao Chang ◽  
Wen-Yen Chen ◽  
Hsiang-Szu Chang ◽  
Tung-Po Hsieh ◽  
Jen-Inn Chyi ◽  
...  

2005 ◽  
Vol 17 (2) ◽  
pp. 512-515 ◽  
Author(s):  
Tung-Po Hsieh ◽  
Hsiang-Szu Chang ◽  
Wen-Yen Chen ◽  
Wen-Hao Chang ◽  
Tzu Min Hsu ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 930
Author(s):  
Xiaoying Huang ◽  
Rongbin Su ◽  
Jiawei Yang ◽  
Mujie Rao ◽  
Jin Liu ◽  
...  

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.


2004 ◽  
Vol 6 ◽  
pp. 99-99 ◽  
Author(s):  
X Brokmann ◽  
G Messin ◽  
P Desbiolles ◽  
E Giacobino ◽  
M Dahan ◽  
...  

Author(s):  
Ying-Lung D. Ho ◽  
Martin J. Cryan ◽  
Ian J. Craddock ◽  
Chris J. Railton ◽  
John G. Rarity

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