Efficient Single-Photon Sources Based on Low-Density Quantum Dots in Photonic-Crystal Nanocavities

2006 ◽  
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Tung-Po Hsieh ◽  
Jen-Inn Chyi ◽  
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2011 ◽  
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2007 ◽  
Author(s):  
Wen-Hao Chang ◽  
Wen-Yen Chen ◽  
Hsiang-Szu Chang ◽  
Tung-Po Hsieh ◽  
Jen-Inn Chyi ◽  
...  

2011 ◽  
Vol 58 (5(1)) ◽  
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Jin Dong Song ◽  
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Jung Il Lee ◽  
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2011 ◽  
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S.-K. Ha ◽  
S. Bounouar ◽  
J. D. Song ◽  
J. Y. Lim ◽  
F. Donatini ◽  
...  

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Nanomaterials ◽  
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In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.


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