Photoinduced transformations in amorphous Se75Ge25 thin film by XeCl excimer-laser exposure

1998 ◽  
Vol 83 (10) ◽  
pp. 5381-5385 ◽  
Author(s):  
Hyun-Yong Lee ◽  
Soo-Ho Park ◽  
Jin-Young Chun ◽  
Hong-Bay Chung
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Exposure ◽  
Xecl Excimer Laser

28.1: High-Mobility Poly-Si TFTs Employing XeCl Excimer Laser Annealing on Selectively Floating a-Si Thin Film

2002 ◽  
Vol 33 (1) ◽  
pp. 905
Author(s):  
Cheon-Hong Kim ◽  
In-Hyuk Song ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Annealing ◽  
High Mobility ◽  
Excimer Laser Annealing ◽  
Si Thin Film ◽  
Xecl Excimer Laser

Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2370-L2372 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Takaya Suzuki ◽  
Akio Mimura ◽  
Yasunori Ohno ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Ion Source ◽  
Large Area ◽  
Excimer Laser Annealing ◽  
Si Thin Film ◽  
Xecl Excimer Laser

scholarly journals Development of carbon thin film for Laser‐driven heavy ion acceleration using a XeCl excimer laser

2020 ◽  
Vol 103 (11-12) ◽  
pp. 16-22
Author(s):  
Mitsuhiro Kusaba ◽  
Fumitaka Nigo ◽  
Kotaro Kondo ◽  
Mamiko Nishiuchi ◽  
Hironao Sakaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Heavy Ion ◽  
Ion Acceleration ◽  
Carbon Thin Film ◽  
Xecl Excimer Laser

A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films

1996 ◽  
Vol 43 (4) ◽  
pp. 561-567 ◽  
Author(s):  
Min Cao ◽  
S. Talwar ◽  
K.J. Kramer ◽  
T.W. Sigmon ◽  
K.C. Saraswat
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
High Performance ◽  
Thin Film Transistor ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Xecl Excimer Laser

Bottom-gate poly-Si thin film transistors using XeCl excimer laser annealing and ion doping techniques

1993 ◽  
Vol 40 (11) ◽  
pp. 1964-1969 ◽  
Author(s):  
M. Furuta ◽  
T. Kawamura ◽  
T. Yoshioka ◽  
Y. Miyata
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Doping ◽  
Si Thin Film ◽  
Bottom Gate ◽  
Xecl Excimer Laser

High performance poly-si thin film transistors (TFTs) fabricated by xecl excimer laser annealing without post-hydrogenation

2005 ◽  
Author(s):  
S. Talwar ◽  
Min Cao ◽  
K.J. Kramer ◽  
G. Verma ◽  
K.C. Saraswat ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Si Thin Film ◽  
Xecl Excimer Laser

Aligned Polycrystalline Silicon Array Thin Film by XeCl Excimer Laser Annealing for AMOLED Displays

2007 ◽  
Vol 124-126 ◽  
pp. 371-374 ◽  
Author(s):  
C.N. Chen ◽  
G.M. Wu ◽  
W.S. Feng
Keyword(s):  
Thin Film ◽  
Energy Density ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Laser Energy ◽  
Annealing Atmosphere ◽  
Excimer Laser Annealing ◽  
Overlap Ratio ◽  
Xecl Excimer Laser

Low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) are demanded to fabricate high performance liquid crystal displays (LCD) and organic light-emitting diode displays (OLED). The mobility of poly-Si TFT can be two orders of magnitude higher than that of amorphous Si (a-Si) TFT. Excimer laser annealing has been studied to be the most promising technology to meet the stringent requirement in high speed operation. The process parameters were identified as a-Si thickness, laser energy density, overlap ratio, annealing atmosphere and pre-clean condition. The a-Si layer of 40-50 nm was deposited by plasma enhanced chemical vapor deposition (PECVD). The XeCl excimer laser was irradiated on the a-Si film at room temperature under N2 or N2/O2 environment. The energy density ranged 250-400 mJ/cm2, and the overlap ratio was 95-99%. The highly aligned poly-Si array thin film could be obtained. The grain size has been about 0.31x0.33 μm2, and the regular arrangement in poly-Si grains was discussed. In addition, the PMOS TFT has been fabricated from the aligned poly-Si array. The mobility was as high as 100 cm2/Vs and the sub-threshold swing was around 0.24 V/dec. The threshold voltage was -1.25 V and the on/off current ratio was about 106.

Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing

1992 ◽  
Vol 31 (Part 1, No. 4) ◽  
pp. 1012-1015 ◽  
Author(s):  
Takashi Aoyama ◽  
Genshiro Kawachi ◽  
Yasuhiro Mochizuki ◽  
Takaya Suzuki
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Ion Source ◽  
Excimer Laser Annealing ◽  
Ion Doping ◽  
Xecl Excimer Laser
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