High performance poly-si thin film transistors (TFTs) fabricated by xecl excimer laser annealing without post-hydrogenation

2005 ◽  
Author(s):  
S. Talwar ◽  
Min Cao ◽  
K.J. Kramer ◽  
G. Verma ◽  
K.C. Saraswat ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Si Thin Film ◽  
Xecl Excimer Laser

Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2370-L2372 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Takaya Suzuki ◽  
Akio Mimura ◽  
Yasunori Ohno ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Ion Source ◽  
Large Area ◽  
Excimer Laser Annealing ◽  
Si Thin Film ◽  
Xecl Excimer Laser

Flat Panel Imagers Based on Excimer Laser Annealed, poly-Si Thin Film Transistor Technology

2001 ◽  
Vol 685 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
R. T. Fulks ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Noise Performance ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
Flat Panel Imagers ◽  
Si Thin Film

AbstractPulsed Excimer-Laser Annealing (ELA) has become an important technology to produce high performance, poly-Si Thin Film Transistors (TFTs) for large area electronics. The much-improved performance of these poly-Si TFTs over the conventional hydrogenated amorphous Si TFTs enables the possibility of building next generation flat panel imagers with higher-level integration and better noise performance. Both the on-glass integration of peripheral driver electronics to reduce the cost of interconnection and the integration of a pixel level amplifier to improve the noise performance of large area imagers have been demonstrated and are discussed in this paper.

Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3700-3703 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Seiichi Kiyama ◽  
Shigeru Noguchi ◽  
Takashi Kuwahara ◽  
Satoshi Ishida ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Si Thin Film

Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing

2013 ◽  
Vol 811 ◽  
pp. 177-180
Author(s):  
Jyh Liang Wang ◽  
Chun Chien Tsai ◽  
Chuan Chou Hwang ◽  
Tsang Yen Hsieh
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Annealing ◽  
Electrical Characteristics ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
Bottom Gate

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.

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