Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2370-L2372 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Takaya Suzuki ◽  
Akio Mimura ◽  
Yasunori Ohno ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Ion Source ◽  
Large Area ◽  
Excimer Laser Annealing ◽  
Si Thin Film ◽  
Xecl Excimer Laser

Flat Panel Imagers Based on Excimer Laser Annealed, poly-Si Thin Film Transistor Technology

2001 ◽  
Vol 685 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
R. T. Fulks ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Noise Performance ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
Flat Panel Imagers ◽  
Si Thin Film

AbstractPulsed Excimer-Laser Annealing (ELA) has become an important technology to produce high performance, poly-Si Thin Film Transistors (TFTs) for large area electronics. The much-improved performance of these poly-Si TFTs over the conventional hydrogenated amorphous Si TFTs enables the possibility of building next generation flat panel imagers with higher-level integration and better noise performance. Both the on-glass integration of peripheral driver electronics to reduce the cost of interconnection and the integration of a pixel level amplifier to improve the noise performance of large area imagers have been demonstrated and are discussed in this paper.

Large Area Doping Process for Fabrication of p-Si TFT's Using Bucket Ion Source and XeCl Excimer Laser Annealing

1990 ◽  
Author(s):  
Genshiro KAWACHI ◽  
Takashi AOYAMA ◽  
Takaya SUZUKI ◽  
Akio MIMURA ◽  
Yasunori OHNO ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Ion Source ◽  
Large Area ◽  
Excimer Laser Annealing ◽  
Xecl Excimer Laser
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