Two-dimensional tight-binding model of ac conductivity in porous silicon

1998 ◽  
Vol 83 (12) ◽  
pp. 7693-7698 ◽  
Author(s):  
H. Cruz ◽  
D. Luis ◽  
N. E. Capuj ◽  
L. Pavesi
Keyword(s):  
Porous Silicon ◽  
Ac Conductivity ◽  
Tight Binding ◽  
Two Dimensional ◽  
Tight Binding Model ◽  
Binding Model

A Tight-Binding Model for Optical Properties of Porous Silicon

1997 ◽  
Vol 491 ◽  
Author(s):  
M. Cruz ◽  
M. R. Beltran ◽  
C. Wang ◽  
J. Tagüeña-Martinez
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Basis Set ◽  
Extended Defects ◽  
Tight Binding Model ◽  
Binding Model ◽  
Semi Empirical ◽  
Good Agreement

ABSTRACTSemi-empirical tight-binding techniques have been extensively used during the last six decades to study local and extended defects as well as aperiodic systems. In this work we propose a tight-binding model capable of describing optical properties of disordered porous materials in a novel way. Besides discussing the details of this approach, we apply it to study porous silicon (p-Si). For this purpose, we use an sp3s* basis set and supercells, where empty columns are digged in the [001] direction in crystalline silicon (c-Si). The disorder of the pores is considered through a random perturbative potential, which relaxes the wave vector selection rule, resulting in a significant enlargement of the optically active k-zone. The dielectric function and the light absorption spectra are calculated. The results are compared with experimental data showing a good agreement.

Magnetotransport in a two-dimensional tight-binding model

1994 ◽  
Vol 50 (12) ◽  
pp. 8636-8643 ◽  
Author(s):  
J. Skjånes ◽  
E. H. Hauge ◽  
Gerd Schön
Keyword(s):  
Tight Binding ◽  
Two Dimensional ◽  
Tight Binding Model ◽  
Binding Model
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