Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment

2000 ◽  
Vol 87 (11) ◽  
pp. 8192-8194 ◽  
Author(s):  
M. J. Yang ◽  
B. R. Bennett ◽  
M. Fatemi ◽  
P. J. Lin-Chung ◽  
W. J. Moore ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Single Quantum

Type II Band Alignment inSi1−xGex/Si(001)Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending

1997 ◽  
Vol 79 (2) ◽  
pp. 269-272 ◽  
Author(s):  
M. L. W. Thewalt ◽  
D. A. Harrison ◽  
C. F. Reinhart ◽  
J. A. Wolk ◽  
H. Lafontaine
Keyword(s):  
Quantum Wells ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Band Bending

EFFECT OF THE VOIGT MAGNETIC FIELD ON THE EXCITON COMPLEXES IN ZnSe/BeTe TYPE-II SINGLE QUANTUM WELLS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3749-3752
Author(s):  
HIROAKI YAMAMOTO ◽  
ZIWU JI ◽  
HIROFUMI MINO ◽  
RYOICHI AKIMOTO ◽  
SHOJIRO TAKEYAMA
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Lower Energy ◽  
Band Alignment ◽  
Type Ii ◽  
Single Quantum ◽  
Energy Dispersion ◽  
Pl Spectra ◽  
Peak Energy

We have performed the magneto-photoluminescence (PL) measurements on ZnSe / BeTe quantum well (QW) structures with a type-II band alignment in a Voigt configuration. The PL spectra were composed of two components. The lower energy PL peak energy shows red-shifts applying magnetic field. A model of the energy dispersion shift of the spatially indirect exciton complexes probably explains these results.

Effect of well width variation on type-I/type-II photoluminescence in GaAs/AlAs single quantum wells

1997 ◽  
Vol 21 (2) ◽  
pp. 187-193 ◽  
Author(s):  
L.J. Blue ◽  
T. Daniels-Race ◽  
C.N. Yeh ◽  
L.E. McNeil
Keyword(s):  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Single Quantum

Characteristics of Strained GaAsSb(N)/InP Quantum Wells Grown by Metalorganic Chemical Vapor Deposition on InP Substrates

2007 ◽  
Vol 994 ◽  
Author(s):  
Dapeng Xu ◽  
Juno Yu-Ting Huang ◽  
Joo Hyung Park ◽  
Luke J Mawst ◽  
Thomas F Kuech ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
N Incorporation ◽  
Ir Emission ◽  
Inp Substrates

AbstractGaAsSb (N) superattices (SLs) grown on InP substrates using metalorganic vapor phase epitaxy are investigated by high resolution X-ray diffraction (XRD), low temperature photoluminescence (PL), and high resolution transmission electron microscopy (TEM). XRD shows very sharp satellite peaks and pendellosung fringes, which indicates excellent crystalline quality and abrupt interfaces in the GaAsSb (N)/InP SL, with Sb varies with 0.2 to 0.7. Low temperature PL shows clearly different features between the 25% Sb and 44% Sb samples. A band alignment difference is proposed to explain these behaviors. Experimental data establishes that the transition from a type-I to a type-II heterostructure occurs for a Sb-content of approximately 40%, which agrees well with the prediction by Model Solid Theory. While N incorporation degrades the PL intensity, it also provides the greater electron confinement needed to achieve mid-IR emission from GaAsSbN/GaAsSb type-II QWs

Type II indirect and type I direct recombinations in GaAs/A1As single quantum wells

1991 ◽  
Vol 9 (1-3) ◽  
pp. 285-288 ◽  
Author(s):  
D.B. Holt ◽  
C.E. Norman ◽  
G. Salviati ◽  
S. Franchi ◽  
A. Bosacchi
Keyword(s):  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Single Quantum

scholarly journals Coexistence of type-I and type-II band line-ups in 1-2 monolayer thick GaN/AlN single quantum wells

2017 ◽  
Vol 917 ◽  
pp. 062050
Author(s):  
E A Evropeytsev ◽  
V N Jmerik ◽  
D V Nechaev ◽  
S Rouvimov ◽  
T V Shubina ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Single Quantum

OPTICAL STUDIES OF TYPE I AND TYPE II RECOMBINATION IN GaAs-AlAs QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-525-C5-528 ◽  
Author(s):  
K. J. MOORE ◽  
P. DAWSON ◽  
C. T. FOXON
Keyword(s):  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Optical Studies

Excitonic properties of type-I and type-II Si∕Si1−xGex quantum wells

2007 ◽  
Vol 101 (11) ◽  
pp. 113703 ◽  
Author(s):  
Andrey Chaves ◽  
J. Costa e Silva ◽  
J. A. K. Freire ◽  
G. A. Farias
Keyword(s):  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Excitonic Properties

Type I–type II anticrossing and enhanced Stark effect in asymmetric coupled quantum wells

1988 ◽  
Vol 53 (26) ◽  
pp. 2584-2586 ◽  
Author(s):  
J. E. Golub ◽  
P. F. Liao ◽  
D. J. Eilenberger ◽  
J. P. Harbison ◽  
L. T. Florez ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Type I ◽  
Type Ii ◽  
Coupled Quantum Wells
Sign in / Sign up

Export Citation Format

Share Document