Memory characteristics of laser-crystallized polycrystalline-silicon silicon-oxide-nitride-oxide-silicon thin-film transistor with location-controlled grain boundary perpendicular to the channel
Keyword(s):
Keyword(s):
2006 ◽
Vol 27
(7)
◽
pp. 579-581
◽
Keyword(s):
Keyword(s):
2009 ◽
Vol 30
(10)
◽
pp. 1072-1074
◽
Keyword(s):
Keyword(s):
2011 ◽
Vol 50
(6)
◽
pp. 06GF12
◽
Keyword(s):
Keyword(s):
Keyword(s):