Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

Wen-Hung Lo; Ting-Chang Chang; Jyun-Yu Tsai; Chih-Hao Dai; Ching-En Chen; Szu-Han Ho; Hua-Mao Chen; Osbert Cheng; Cheng-Tung Huang

doi:10.1063/1.4752456

Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.4752456 ◽

2012 ◽

Vol 101 (13) ◽

pp. 133505 ◽

Cited By ~ 1

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Jyun-Yu Tsai ◽

Chih-Hao Dai ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Bias Stress ◽

State Generation

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Cited By ~ 8

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement

Applied Physics Letters ◽

10.1063/1.4868532 ◽

2014 ◽

Vol 104 (11) ◽

pp. 113503 ◽

Cited By ~ 6

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Ying-Hsin Lu ◽

Ching-En Chen ◽

Jyun-Yu Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Input Output ◽

Threshold Voltage Shift ◽

Bias Stress

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.114001 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 114001 ◽

Cited By ~ 1

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.114001 ◽

2012 ◽

Vol 51 ◽

pp. 114001

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2928235 ◽

2008 ◽

Vol 92 (20) ◽

pp. 202901 ◽

Cited By ~ 7

Author(s):

De-Cheng Hsu ◽

Ingram Yin-ku Chang ◽

Ming-Tsong Wang ◽

Pi-Chun Juan ◽

Y. L. Wang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.2496 ◽

1999 ◽

Vol 38 (Part 1, No. 4B) ◽

pp. 2496-2500 ◽

Cited By ~ 4

Author(s):

Tran Ngoc Duyet ◽

Hiroki Ishikuro ◽

Yi Shi ◽

Makoto Takamiya ◽

Takuya Saraya ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted

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A Monte Carlo study of hot electron injection and interface state generation model for silicon metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.355752 ◽

1994 ◽

Vol 75 (10) ◽

pp. 5087-5094 ◽

Cited By ~ 15

Author(s):

John J. Ellis‐Monaghan ◽

K. W. Kim ◽

Michael A. Littlejohn

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Monte Carlo Study ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Model ◽

Hot Electron ◽

Hot Electron Injection ◽

State Generation

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Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3699226 ◽

2012 ◽

Vol 100 (14) ◽

pp. 143503 ◽

Cited By ~ 7

Author(s):

Ze Yuan ◽

Aneesh Nainani ◽

Brian R. Bennett ◽

J. Brad Boos ◽

Mario G. Ancona ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Band Engineering ◽

State Response

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Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics

Applied Physics Letters ◽

10.1063/1.2754640 ◽

2007 ◽

Vol 91 (3) ◽

pp. 033501 ◽

Cited By ~ 7

Author(s):

Shiyang Zhu ◽

Anri Nakajima

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias

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Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4739525 ◽

2012 ◽

Vol 101 (5) ◽

pp. 052105 ◽

Cited By ~ 4

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Chi-Wei Wu ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Metal Gate ◽

Gate Current ◽

Bias Stress

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