Relation between the work function and Young's modulus of RhSi and estimate of Schottky-barrier height at RhSi/Si interface: An ab-initio study

2012 ◽  
Vol 112 (9) ◽  
pp. 093702 ◽  
Author(s):  
Manish K. Niranjan ◽  
Umesh V. Waghmare
Keyword(s):  
Ab Initio ◽  
Work Function ◽  
Schottky Barrier ◽  
Young’S Modulus ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Young's Modulus ◽  
Ab Initio Study

Schottky Barrier Height in GaN/Al Junctions: an ab-initio Study

2002 ◽  
Vol 190 (1) ◽  
pp. 257-262
Author(s):  
S. Picozzi ◽  
A. Continenza ◽  
S. Massidda ◽  
A.J. Freeman
Keyword(s):  
Ab Initio ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Ab Initio Study

Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 923-926 ◽  
Author(s):  
Masataka Satoh ◽  
H. Matsuo
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Crystal Orientation ◽  
Schottky Barrier Height ◽  
Donor Concentration ◽  
Metal Contacts ◽  
Acceptor Concentration ◽  
Small Change ◽  
P Type

The Schottky barrier height (SBH) of Al, Ti, Au, and Ni contacts to n- and p-type 3C-SiC is investigated by means of I-V and C-V measurements. All metal contacts to n- (net donor concentration: 1.0 x 1016 /cm3) and p-type (net acceptor concentration: 4 x 1016 /cm3) 3C-SiC show the rectifying I-V characteristics except for Al contact to n-type 3C-SiC. Only Al contact to n-type 3C-SiC shows the ohmic characteristics. As the work function of metal is increased from 4.3 (Ti) to 5.2 (Ni) eV, SBH for n-type 3C-SiC is increased from 0.4 to 0.7 eV and SBH for p-type 3C-SiC is decreased from 2.2 to 1.8 eV. The small change of SBH for 3C-SiC may be correlated to the crystal orientation and the defects on the surface of 3C-SiC.

Ab Initio Study of SiC/Metal Polar Interfaces: Relation Between Interface Structure and Schottky-Barrier Height

2000 ◽  
Vol 640 ◽  
Author(s):  
Shingo Tanaka ◽  
Masanori Kohyama
Keyword(s):  
Ab Initio ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Adhesive Energy ◽  
Work Functions ◽  
The Difference ◽  
Cubic Silicon Carbide ◽  
The Relationship ◽  
Dynamics Method

ABSTRACTAb initio calculations of the polar interfaces between thin films of titanium and cubic silicon-carbide (SiC) have been performed by using the first-principles molecular dynamics method. Stable configurations, adhesive energies and Schottky-barrier height (SBH) for the Si-terminated and the C-terminated interfaces are obtained. The C-terminated interface has covalent C-Ti bonds, while the Si-terminated interface has shown metallic nature. Adhesive energy/SBH of the C-terminated interface is larger/smaller than that of the Si-terminated one, respectively. In order to examine a conventional SBH model, work functions of SiC slab with Si and with C surface and Ti slab have been calculated and SBHs have been estimated from the difference of work functions. In estimated SBHs between the interfaces, the relationship depend on the crystal orientation as (111) and (001).

Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001)

2010 ◽  
Vol 97 (23) ◽  
pp. 232104 ◽  
Author(s):  
T. Jaouen ◽  
G. Jézéquel ◽  
G. Delhaye ◽  
B. Lépine ◽  
P. Turban ◽  
...  
Keyword(s):  
Work Function ◽  
Ionization Potential ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

Dependence of Schottky Barrier Height on Metal Work Function

2011 ◽  
Author(s):  
Shammi Verma ◽  
D. Kabiraj ◽  
T. Kumar ◽  
Sandeep Kumar ◽  
D. Kanjilal ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Metal Work Function ◽  
Metal Work
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