Rare earth doped Si-rich ZnO for multiband near-infrared light emitting devices

2012 ◽  
Vol 101 (19) ◽  
pp. 191115 ◽  
Author(s):  
Emanuele Francesco Pecora ◽  
Thomas I. Murphy ◽  
Luca Dal Negro
2017 ◽  
Vol 5 (10) ◽  
pp. 2542-2551 ◽  
Author(s):  
Gao-Hang He ◽  
Ming-Ming Jiang ◽  
Lin Dong ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  

Electrically driven near-infrared light-emission from individual heavily Ga-doped ZnO microwires has been achieved, which can be analogous to incandescent sources.


2015 ◽  
Vol 107 (13) ◽  
pp. 131103 ◽  
Author(s):  
Chen Zhu ◽  
Chunyan Lv ◽  
Zhifei Gao ◽  
Canxing Wang ◽  
Dongsheng Li ◽  
...  

2021 ◽  
pp. 103879
Author(s):  
Hyung-Joo Lee ◽  
Gwang-Hoon Park ◽  
Jin-Su So ◽  
Choong-Hun Lee ◽  
Jae-Hoon Kim ◽  
...  

2011 ◽  
Vol 20 (7) ◽  
pp. 1405-1415 ◽  
Author(s):  
Brian D. Hodgson ◽  
David M. Margolis ◽  
Donna E. Salzman ◽  
Dan Eastwood ◽  
Sergey Tarima ◽  
...  

2016 ◽  
Vol 18 (6) ◽  
pp. 5034-5039 ◽  
Author(s):  
Jia-Hong Hsu ◽  
Hai-Ching Su

NIR EL can be achieved by adjusting the device thickness of non-doped saturated red LECs.


2016 ◽  
Vol 34 (12) ◽  
pp. 610-626 ◽  
Author(s):  
Margaret A. Naeser ◽  
Paula I. Martin ◽  
Michael D. Ho ◽  
Maxine H. Krengel ◽  
Yelena Bogdanova ◽  
...  

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