Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires

2017 ◽  
Vol 5 (10) ◽  
pp. 2542-2551 ◽  
Author(s):  
Gao-Hang He ◽  
Ming-Ming Jiang ◽  
Lin Dong ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  

Electrically driven near-infrared light-emission from individual heavily Ga-doped ZnO microwires has been achieved, which can be analogous to incandescent sources.

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.


2012 ◽  
Vol 101 (19) ◽  
pp. 191115 ◽  
Author(s):  
Emanuele Francesco Pecora ◽  
Thomas I. Murphy ◽  
Luca Dal Negro

Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  

2021 ◽  
pp. 103879
Author(s):  
Hyung-Joo Lee ◽  
Gwang-Hoon Park ◽  
Jin-Su So ◽  
Choong-Hun Lee ◽  
Jae-Hoon Kim ◽  
...  

2011 ◽  
Vol 20 (7) ◽  
pp. 1405-1415 ◽  
Author(s):  
Brian D. Hodgson ◽  
David M. Margolis ◽  
Donna E. Salzman ◽  
Dan Eastwood ◽  
Sergey Tarima ◽  
...  

2016 ◽  
Vol 18 (6) ◽  
pp. 5034-5039 ◽  
Author(s):  
Jia-Hong Hsu ◽  
Hai-Ching Su

NIR EL can be achieved by adjusting the device thickness of non-doped saturated red LECs.


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