Time evolution of photo-generated defect states in a-Se thin films

2013 ◽  
Author(s):  
Rituraj Sharma ◽  
Pritam Khan ◽  
S. Binu ◽  
K. V. Adarsh
Keyword(s):  
Thin Films ◽  
Time Evolution ◽  
Defect States

Reduction of defect states of tantalum oxide thin films with additive elements

2003 ◽  
Vol 6 (5-6) ◽  
pp. 531-533 ◽  
Author(s):  
K.M.A. Salam ◽  
Hisashi Fukuda ◽  
Shigeru Nomura
Keyword(s):  
Thin Films ◽  
Tantalum Oxide ◽  
Oxide Thin Films ◽  
Defect States

150 KeV Cu− ion- implantation in SrVO3 thin films: A study of Cu induced defect states

Vacuum ◽  
2020 ◽  
Vol 181 ◽  
pp. 109655
Author(s):  
Himani Saraswat ◽  
Surekha Chaudhary ◽  
Mayora Varshney ◽  
Devarani Devi ◽  
Fouran Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Defect States

Creation of multiple defect states in RF sputtered lidoped ZnO nanocrystalline thin films

2020 ◽  
Vol 758 ◽  
pp. 137951
Author(s):  
M. Shaheera ◽  
K.G. Girija ◽  
Manmeet Kaur ◽  
V. Geetha ◽  
A.K. Debnath ◽  
...  
Keyword(s):  
Thin Films ◽  
Defect States ◽  
Multiple Defect ◽  
Nanocrystalline Thin Films

Energy Levels of Defects in a-Si:H From Optical and Electrical Characteristics

1996 ◽  
Vol 424 ◽  
Author(s):  
T. Globus
Keyword(s):  
Thin Films ◽  
Energy Levels ◽  
Thin Film Transistor ◽  
Close Correlation ◽  
Device Fabrication ◽  
Defect States ◽  
Optical Interference ◽  
Hydrogenated Silicon ◽  
Transfer Characteristics ◽  
Wide Range

AbstractTwo novel characterization techniques for hydrogenated silicon thin films have been recently proposed which show promise in providing critical feedback for evaluating materials and monitoring the device fabrication process. The first technique is the optical interference spectroscopy for a quick non-destructive measurement of absorption coefficient and refractive index spectra of amorphous- and poly-Si thin films in a wide range of the incident photon energies (0.5–3.5 eV) [1]. By using this technique, the absorption related to defects in the subgap energy region has been determined for device quality thin films. The second technique is the novel version of the field effect conductivity (FEC) method for the direct density-of-states (DOS) determination from analysis of thin film transistor (TFT) quasi-static transfer characteristics [2]. This sensitive, fast, and easy to use, method makes it possible to resolve fine-scale features in the midgap DOS of a-Si:H. In this work, data from two methods of spectroscopy are analyzed together. Very close correlation of results is demonstrated which provides a unique opportunity to identify midgap defect states and to understand the fundamental physics of hydrogenated silicon films. The energy map of defect states in the upper half of a-Si:H bandgap is presented. These results permits to use TFT transfer characteristics and optical interference technique measurements as effective tools to control the quality of TFF manufacturing process.

Time evolution of heterogeneous thin films during annealing

1989 ◽  
Vol 220 (1) ◽  
pp. 165-180 ◽  
Author(s):  
Akiko Natori ◽  
Masahiro Baba ◽  
Hitoshi Yasunaga
Keyword(s):  
Thin Films ◽  
Time Evolution
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