Hafnia-plugged microcavities for thermal stability of selective emitters

2013 ◽  
Vol 102 (24) ◽  
pp. 241904 ◽  
Author(s):  
Heon-Ju Lee ◽  
Katherine Smyth ◽  
Stephen Bathurst ◽  
Jeffrey Chou ◽  
Michael Ghebrebrhan ◽  
...  
2013 ◽  
Vol 1497 ◽  
Author(s):  
Heon J. Lee ◽  
Stephen P. Bathurst ◽  
Sang-Gook Kim

ABSTRACTA fundamental challenge in solar-thermal-electrical energy conversion is the thermal stability of materials and devices at high operational temperatures. This study focuses on the thermal stability of selective emitters for solar thermophotovoltaic (STPV) systems to enhance the conversion efficiency. 2-D photonic crystals are periodic micro/nano-scale structures that are designed to affect the motion of photons at certain wavelengths. The structured patterns, however, lose their structural integrity at high temperature, which disrupts the tight tolerances required for spectral control of the thermal emitters. Through analytical studies and experimental observations, the four major mechanisms of thermal degradation of 2-D photonic crystal are identified: oxidation, grain growth and re-crystallization, surface diffusion, and evaporation and re-condensation. In this work, the design of a flat surface photonic crystal (FSPC) is proposed and experimental validations are performed.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  

Diabetes ◽  
1984 ◽  
Vol 33 (8) ◽  
pp. 745-751 ◽  
Author(s):  
D. K. Yue ◽  
S. McLennan ◽  
D. J. Handelsman ◽  
L. Delbridge ◽  
T. Reeve ◽  
...  

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