Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

Applied Physics Letters ◽

10.1063/1.4830368 ◽

2013 ◽

Vol 103 (20) ◽

pp. 202110 ◽

Author(s):

P. Liu ◽

T. P. Chen ◽

X. D. Li ◽

Z. Liu ◽

J. I. Wong ◽

...

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Threshold Voltage Shift ◽

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A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

Journal of Applied Physics ◽

10.1063/1.4870457 ◽

2014 ◽

Vol 115 (13) ◽

pp. 134501 ◽

Author(s):

A. J. Flewitt ◽

M. J. Powell

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Energy Analysis ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Threshold Voltage Shift ◽

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Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

Applied Physics Letters ◽

10.1063/1.4902867 ◽

2014 ◽

Vol 105 (21) ◽

pp. 213505 ◽

Author(s):

Kwang-Won Jo ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Microwave Irradiation ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors

Solid-State Electronics ◽

10.1016/j.sse.2013.04.025 ◽

2013 ◽

Vol 86 ◽

pp. 41-44 ◽

Author(s):

Xiaoming Huang ◽

Chenfei Wu ◽

Hai Lu ◽

Fangfang Ren ◽

Dunjun Chen ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Carrier Transport ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Transport Mechanisms ◽

Zinc Oxide Thin Film ◽

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Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2bilayer passivation under gate bias stress

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.02bc17 ◽

2016 ◽

Vol 55 (2S) ◽

pp. 02BC17 ◽

Author(s):

Ching-Lin Fan ◽

Fan-Ping Tseng ◽

Bo-Jyun Li ◽

Yu-Zuo Lin ◽

Shea-Jue Wang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Gate Bias Stress

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Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors

Applied Physics Letters ◽

10.1063/1.4793996 ◽

2013 ◽

Vol 102 (8) ◽

pp. 083508 ◽

Author(s):

Dong Han Kang ◽

Ji Ung Han ◽

Mallory Mativenga ◽

Su Hwa Ha ◽

Jin Jang

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Voltage Dependence ◽

Channel Length ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors

2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) ◽

10.1109/iceee.2016.7751186 ◽

2016 ◽

Author(s):

Y. Hernandez-Barrios ◽

F. Avila ◽

M. Estrada ◽

A. Cerdeira ◽

O. Moldovan ◽

...

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Mobility Factor ◽

Saturation Coefficient ◽

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A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

Applied Physics Letters ◽

10.1063/1.4943249 ◽

2016 ◽

Vol 108 (9) ◽

pp. 093505 ◽

Author(s):

K. M. Niang ◽

P. M. C. Barquinha ◽

R. F. P. Martins ◽

B. Cobb ◽

M. J. Powell ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Energy Analysis ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Threshold Voltage Shift ◽

Bias Stress ◽

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Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.2972978 ◽

2020 ◽

Vol 67 (4) ◽

pp. 1606-1612 ◽

Author(s):

Xuewen Shi ◽

Congyan Lu ◽

Xinlv Duan ◽

Qian Chen ◽

Hansai Ji ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

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9.3: Control of Threshold Voltage in Back Channel Etch Type Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

SID Symposium Digest of Technical Papers ◽

10.1889/1.3621002 ◽

2011 ◽

Vol 42 (1) ◽

pp. 104-106 ◽

Author(s):

Seung Min Lee ◽

Chang Il Ryoo ◽

Jae Wook Park ◽

Joonsoo Han ◽

Dae-Won Kim ◽

...

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

Applied Physics Letters ◽

10.1063/1.3580611 ◽

2011 ◽

Vol 98 (15) ◽

pp. 153511 ◽

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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