Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2bilayer passivation under gate bias stress

2016 ◽  
Vol 55 (2S) ◽  
pp. 02BC17 ◽  
Author(s):  
Ching-Lin Fan ◽  
Fan-Ping Tseng ◽  
Bo-Jyun Li ◽  
Yu-Zuo Lin ◽  
Shea-Jue Wang ◽  
...  
2020 ◽  
Vol 67 (4) ◽  
pp. 1606-1612 ◽  
Author(s):  
Xuewen Shi ◽  
Congyan Lu ◽  
Xinlv Duan ◽  
Qian Chen ◽  
Hansai Ji ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document