Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

Applied Physics Letters ◽

10.1063/1.4902867 ◽

2014 ◽

Vol 105 (21) ◽

pp. 213505 ◽

Author(s):

Kwang-Won Jo ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Microwave Irradiation ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Download Full-text

Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2bilayer passivation under gate bias stress

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.02bc17 ◽

2016 ◽

Vol 55 (2S) ◽

pp. 02BC17 ◽

Author(s):

Ching-Lin Fan ◽

Fan-Ping Tseng ◽

Bo-Jyun Li ◽

Yu-Zuo Lin ◽

Shea-Jue Wang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Gate Bias Stress

Download Full-text

Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

Applied Physics Letters ◽

10.1063/1.3580611 ◽

2011 ◽

Vol 98 (15) ◽

pp. 153511 ◽

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Download Full-text

Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

Applied Physics Letters ◽

10.1063/1.3357431 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102107 ◽

Author(s):

Sang-Yun Sung ◽

Jun Hyuk Choi ◽

Un Bin Han ◽

Ki Chang Lee ◽

Joon-Hyung Lee ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Ambient Atmosphere ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Download Full-text

Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors

Solid-State Electronics ◽

10.1016/j.sse.2013.04.025 ◽

2013 ◽

Vol 86 ◽

pp. 41-44 ◽

Author(s):

Xiaoming Huang ◽

Chenfei Wu ◽

Hai Lu ◽

Fangfang Ren ◽

Dunjun Chen ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Carrier Transport ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Transport Mechanisms ◽

Zinc Oxide Thin Film ◽

Download Full-text

Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

Journal of Applied Physics ◽

10.1063/1.3662869 ◽

2011 ◽

Vol 110 (11) ◽

pp. 114503 ◽

Author(s):

Md Delwar Hossain Chowdhury ◽

Sang Hyun Ryu ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Annealing Time ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Download Full-text

Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

Journal of Applied Physics ◽

10.1063/1.4870458 ◽

2014 ◽

Vol 115 (13) ◽

pp. 134502 ◽

Author(s):

Jae Gwang Um ◽

Mallory Mativenga ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Elevated Temperature ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Download Full-text

Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

Applied Physics Letters ◽

10.1063/1.4948765 ◽

2016 ◽

Vol 108 (18) ◽

pp. 182104 ◽

Author(s):

Eungtaek Kim ◽

Choong-Ki Kim ◽

Myung Keun Lee ◽

Tewook Bang ◽

Yang-Kyu Choi ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Insulator ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Download Full-text

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

Applied Physics Letters ◽

10.1063/1.4943249 ◽

2016 ◽

Vol 108 (9) ◽

pp. 093505 ◽

Author(s):

K. M. Niang ◽

P. M. C. Barquinha ◽

R. F. P. Martins ◽

B. Cobb ◽

M. J. Powell ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Energy Analysis ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Threshold Voltage Shift ◽

Bias Stress ◽

Download Full-text

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Chinese Physics B ◽

10.1088/1674-1056/24/7/077307 ◽

2015 ◽

Vol 24 (7) ◽

pp. 077307 ◽

Author(s):

Hui-Min Qian ◽

Guang Yu ◽

Hai Lu ◽

Chen-Fei Wu ◽

Lan-Feng Tang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Temperature Dependent ◽

Bias Stress ◽

Electrical Instability ◽

Download Full-text

Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.2972978 ◽

2020 ◽

Vol 67 (4) ◽

pp. 1606-1612 ◽

Author(s):

Xuewen Shi ◽

Congyan Lu ◽

Xinlv Duan ◽

Qian Chen ◽

Hansai Ji ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Download Full-text