Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InAs HEMTs taking into account the non-parabolicity of the conduction band

2013 ◽  
Author(s):  
Yui Nishio ◽  
Satoshi Yamaguchi ◽  
Youichi Yamazaki ◽  
Akira Watanabe ◽  
Takahiro Tange ◽  
...  
Keyword(s):  
Conduction Band ◽  
Theoretical Study ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Energy States ◽  
Dimensional Electron Gas

Analysis of energy states of two-dimensional electron gas taking into account the nonparabolicity of the conduction band

2013 ◽  
Vol 210 (11) ◽  
pp. 2423-2430 ◽  
Author(s):  
Yui Nishio ◽  
Takahiro Tange ◽  
Naomi Hirayama ◽  
Tsutomu Iida ◽  
Yoshifumi Takanashi
Keyword(s):  
Conduction Band ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Energy States ◽  
Dimensional Electron Gas

scholarly journals Theoretical Study on Electron Dynamics for a Two-Dimensional Electron Gas Coupled with a Quantum Dot

2010 ◽  
Author(s):  
Masakazu Muraguchi ◽  
Yukihiro Takada ◽  
Shintaro Nomura ◽  
Kenji Shiraishi ◽  
Marília Caldas ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Theoretical Study ◽  
Electron Gas ◽  
Two Dimensional ◽  
Electron Dynamics ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Intrinsic Mobility Limits of a Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
W. Walukiewicz ◽  
L. Hsu ◽  
J. M. Redwing
Keyword(s):  
Low Temperature ◽  
Theoretical Study ◽  
Electron Gas ◽  
Two Dimensional ◽  
Optical Phonons ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Quality ◽  
Structure Comparison ◽  
Dimensional Electron Gas

ABSTRACTWe present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1−xN/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1−xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

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