Intrinsic Mobility Limits of a Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures
Keyword(s):
ABSTRACTWe present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1−xN/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1−xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.
1986 ◽
Vol 33
(5)
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pp. 572-575
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2013 ◽
2003 ◽
1994 ◽
Vol 12
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pp. 2910
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