The theoretical study of the mobility of a two-dimensional electron gas in ALGaN/GaN/ALGaN double heterostructures

2021 ◽  
Vol 94 (5) ◽  
Author(s):  
Truong Van Tuan ◽  
Nguyen Quoc Khanh ◽  
Vo Van Tai ◽  
Dang Khanh Linh
Keyword(s):  
Theoretical Study ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Double Heterostructures ◽  
Dimensional Electron Gas

Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors

1999 ◽  
Vol 595 ◽  
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Double Heterostructure ◽  
Gas Transport Properties ◽  
Double Heterostructures ◽  
Dimensional Electron Gas

Two-dimensional electron gas transport properties have been investigated in nitride double-heterostructures. A striking effect has been observed that the two-dimensional electron gas mobility has been drastically enhanced in the AlGaN/GaN/AlGaN doubleheterostructure, compared with that in the conventional AlGaN/GaN singleheterostructure. The observed mobility enhancement has been shown to be mainly due to the enhanced polarization-induced electron confinement in the double-heterostructure, and additionally due to the improvement of the interface roughness in the structure. Device operation of an AlGaN/GaN/AlGaN double-heterostructure field effect transistor has been demonstrated: a maximum transconductance of 180 mS/mm has been obtained for a 0.4 mm-gate-length device. In the double-heterostructure using InGaN channel, the increased capacity for the two-dimensional electron gas has been observed. The AlGaN/(In)GaN/AlGaN double-heterostructures are effective for improving the electron transport properties.

scholarly journals Theoretical Study on Electron Dynamics for a Two-Dimensional Electron Gas Coupled with a Quantum Dot

2010 ◽  
Author(s):  
Masakazu Muraguchi ◽  
Yukihiro Takada ◽  
Shintaro Nomura ◽  
Kenji Shiraishi ◽  
Marília Caldas ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Theoretical Study ◽  
Electron Gas ◽  
Two Dimensional ◽  
Electron Dynamics ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

scholarly journals Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors

2000 ◽  
Vol 5 (S1) ◽  
pp. 362-368
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Double Heterostructure ◽  
Gas Transport Properties ◽  
Double Heterostructures ◽  
Dimensional Electron Gas

Two-dimensional electron gas transport properties have been investigated in nitride double-heterostructures. A striking effect has been observed that the two-dimensional electron gas mobility has been drastically enhanced in the AlGaN/GaN/AlGaN double-heterostructure, compared with that in the conventional AlGaN/GaN single-heterostructure. The observed mobility enhancement has been shown to be mainly due to the enhanced polarization-induced electron confinement in the double-heterostructure, and additionally due to the improvement of the interface roughness in the structure. Device operation of an AlGaN/GaN/AlGaN double-heterostructure field effect transistor has been demonstrated: a maximum transconductance of 180 mS/mm has been obtained for a 0.4 μm-gate-length device. In the double-heterostructure using InGaN channel, the increased capacity for the two-dimensional electron gas has been observed. The AlGaN/(In)GaN/AlGaN double-heterostructures are effective for improving the electron transport properties.

Intrinsic Mobility Limits of a Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
W. Walukiewicz ◽  
L. Hsu ◽  
J. M. Redwing
Keyword(s):  
Low Temperature ◽  
Theoretical Study ◽  
Electron Gas ◽  
Two Dimensional ◽  
Optical Phonons ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Quality ◽  
Structure Comparison ◽  
Dimensional Electron Gas

ABSTRACTWe present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1−xN/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1−xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

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