Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers
Keyword(s):
2010 ◽
Vol 214
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pp. 012116
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2008 ◽
Vol 153
(1)
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pp. 275-277
Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers
2008 ◽
Vol 153
(1)
◽
pp. 279-281
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2013 ◽
Vol 34
(8-9)
◽
pp. 1721-1726
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Keyword(s):
Keyword(s):
Keyword(s):
2012 ◽
Vol 33
(10-11)
◽
pp. 2076-2081