Electronic transport characterization of silicon wafers by laterally resolved free-carrier absorption and multiparameter fitting

2006 ◽  
Vol 89 (11) ◽  
pp. 112120 ◽  
Author(s):  
Xiren Zhang ◽  
Bincheng Li ◽  
Chunming Gao
Keyword(s):  
Electronic Transport ◽  
Free Carrier ◽  
Silicon Wafers ◽  
Free Carrier Absorption ◽  
Carrier Absorption

Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques

2010 ◽  
Vol 645-648 ◽  
pp. 443-446 ◽  
Author(s):  
Georgios Manolis ◽  
Georgios Zoulis ◽  
Sandrine Juillaguet ◽  
Jean Lorenzzi ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Nitrogen Concentration ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Free Carrier Density ◽  
Temperature Dependences ◽  
Carrier Absorption ◽  
Data Investigation ◽  
The Impact ◽  
Sic Films

Thin 3C-SiC(111) epilayers grown on 6H-SiC(0001) substrate by VLS and CVD procedures were studied by low temperature photoluminescence (LTPL) and nonlinear optical techniques at room and low temperatures. Free carrier density ((0.3-7)×1017 cm-3) and nitrogen concentration (4×1016 cm-3) in the layers were determined from Raman and LTPL data. Investigation of non-equilibrium carrier dynamics by using transient grating and free carrier absorption techniques provided an ambipolar diffusion coefficient Da (~2.5 cm2/s) and carrier lifetime τR (2-4 ns) values at room temperature. The temperature dependences of Da and τR in 40-300 K range revealed the scattering processes in high density plasma as well the impact of defects.

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