Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies
1989 ◽
Vol 4
(2)
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pp. 241-243
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1999 ◽
Vol 273-274
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pp. 584-588
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2004 ◽
Vol 215
(3-4)
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pp. 457-470
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Keyword(s):
1992 ◽
Vol 62
(3)
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pp. 391-393
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