Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4892449 ◽

2014 ◽

Vol 105 (6) ◽

pp. 063506 ◽

Author(s):

N. Killat ◽

M. J. Uren ◽

S. Keller ◽

S. Kolluri ◽

U. K. Mishra ◽

...

Keyword(s):

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.5823 ◽

1999 ◽

Vol 38 (Part 1, No. 10) ◽

pp. 5823-5828 ◽

Author(s):

Naoteru Shigekawa ◽

Tomofumi Furuta ◽

Tetsuya Suemitsu ◽

Yohtaro Umeda

Keyword(s):

Electron Mobility ◽

Flip Chip ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

Optical Characterization ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Obtaining Impact Ionization-Induced Hole Current by Electrical Measurements in Gallium Nitride Metal-Insulator-Semiconductor High Electron Mobility Transistors

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/abfad5 ◽

2021 ◽

Author(s):

Yu-Hsuan Yeh ◽

Ting-Chang Chang ◽

Wei-Chen Huang ◽

Hao-Xuan Zheng ◽

Yu-Ching Tsao ◽

...

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

High Electron ◽

Electrical Measurements ◽

Metal Insulator ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.2410233 ◽

2006 ◽

Vol 89 (26) ◽

pp. 263503 ◽

Author(s):

Po-Hsien Lai ◽

Ssu-I Fu ◽

Ching-Wen Hung ◽

Yan-Ying Tsai ◽

Tzu-Pin Chen ◽

...

Keyword(s):

Temperature Effect ◽

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.09.035 ◽

2015 ◽

Vol 30 ◽

pp. 41-47 ◽

Author(s):

Hsien-Chin Chiu ◽

Chia-Hsuan Wu ◽

Che-Kai Lin ◽

Feng-Tso Chien

Keyword(s):

Work Function ◽

Electron Mobility ◽

Impact Ionization ◽

Flicker Noise ◽

High Electron Mobility Transistors ◽

Aluminum Arsenide ◽

Indium Aluminum Arsenide ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Spatial Mapping of Electroluminescence Due to Impact Ionization in High Electron Mobility Transistors

Applied Spectroscopy ◽

10.1366/0003702001948484 ◽

2000 ◽

Vol 54 (10) ◽

pp. 1423-1428 ◽

Author(s):

C. Gaquiere ◽

B. Boudart ◽

P. A. Dhamelincourt

Keyword(s):

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

Spatial Mapping ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.4935542 ◽

2015 ◽

Vol 118 (19) ◽

pp. 195702 ◽

Author(s):

He Guan ◽

Hongliang Lv ◽

Hui Guo ◽

Yuming Zhang

Keyword(s):

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

High Electron ◽

Small Signal ◽

Signal Modeling ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Small Signal Modeling

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Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors

Acta Physica Polonica A ◽

10.12693/aphyspola.119.222 ◽

2011 ◽

Vol 119 (2) ◽

pp. 222-224

Author(s):

B.G. Vasallo ◽

H. Rodilla ◽

T. González ◽

E. Lefebvre ◽

G. Moschetti ◽

...

Keyword(s):

Monte Carlo ◽

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

Monte Carlo Analysis ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High Frequency Drain Noise in InAlAs/InGaAs/InP High Electron Mobility Transistors in Impact Ionization Regime

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634105 ◽

2006 ◽

Author(s):

Hong Wang ◽

Yuwei Liu ◽

K. Radhakrishnan ◽

Geok Ing Ng

Keyword(s):

Electron Mobility ◽

High Frequency ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Understanding of the excess channel noise in InAlAs∕InGaAs∕InP high electron mobility transistors in impact ionization regime

Applied Physics Letters ◽

10.1063/1.2711376 ◽

2007 ◽

Vol 90 (10) ◽

pp. 103503 ◽

Author(s):

Hong Wang ◽

Yuwei Liu ◽

Rong Zeng ◽

Chee Leong Tan

Keyword(s):

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

Channel Noise ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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