Implementation of nitrogen-doped titanium-tungsten tunable heater in phase change random access memory and its effects on device performance

2014 ◽  
Vol 105 (15) ◽  
pp. 153501 ◽  
Author(s):  
Chun Chia Tan ◽  
Rong Zhao ◽  
Luping Shi ◽  
Tow Chong Chong
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Device Performance ◽  
Access Memory ◽  
Nitrogen Doped

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory

2020 ◽  
Vol 12 (20) ◽  
pp. 23051-23059 ◽  
Author(s):  
Yan Cheng ◽  
Daolin Cai ◽  
Yonghui Zheng ◽  
Shuai Yan ◽  
Lei Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Device Performance ◽  
Access Memory ◽  
Microscopic Mechanism

Phase Transition Characteristics and Device Performance of Sn-doped Ge2Sb2Te5in Phase Change Random Access Memory

2006 ◽  
Vol 45 (No. 48) ◽  
pp. L1273-L1276 ◽  
Author(s):  
Tae Jin Park ◽  
Dae Hyun Kim ◽  
Sung Min Yoon ◽  
Kyu Jeong Choi ◽  
Nam Yeal Lee ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Device Performance ◽  
Access Memory

scholarly journals Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

2013 ◽  
Vol 103 (13) ◽  
pp. 133507 ◽  
Author(s):  
Chun Chia Tan ◽  
Luping Shi ◽  
Rong Zhao ◽  
Qiang Guo ◽  
Yi Li ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Nitrogen Doped

Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bicontinuous Structure ◽  
Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Temperature Dependence of Phase-Change Random Access Memory Cell

2006 ◽  
Vol 45 (5A) ◽  
pp. 3955-3958 ◽  
Author(s):  
X. S. Miao ◽  
L. P. Shi ◽  
H. K. Lee ◽  
J. M. Li ◽  
R. Zhao ◽  
...  
Keyword(s):  
Phase Change ◽  
Temperature Dependence ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Access Memory

scholarly journals Thermal characterization and analysis of phase change random access memory

2005 ◽  
Vol 98 (1) ◽  
pp. 013520 ◽  
Author(s):  
V. Giraud ◽  
J. Cluzel ◽  
V. Sousa ◽  
A. Jacquot ◽  
A. Dauscher ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Thermal Characterization ◽  
Access Memory
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