Preparation of Oxygen-doped and Nitrogen-doped Ge-Sb-Te System Thin Film for Phase Change Random Access Memory by RF Magnetron Sputtering

2006 ◽  
Author(s):  
Shin Kikuchi ◽  
Dong Young Oh ◽  
Isao Kimura ◽  
Yutaka Nishioka ◽  
Masahisa Ueda ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Rf Magnetron Sputtering ◽  
Access Memory ◽  
Nitrogen Doped

Preparation of Ge2Sb2Te5 thin film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering

2006 ◽  
Vol 918 ◽  
Author(s):  
Shin Kikuchi ◽  
Dong Yong Oh ◽  
Isao Kimura ◽  
Yutaka Nishioka ◽  
Koukou Suu
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Rf Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Access Memory ◽  
Target Composition

AbstractPhase Change Random Access Memory [PRAM] is one of the candidate for next generation memory due to its non-volitality, high speed, high density and compatibility with Si-based semiconductor process. Ge2Sb2Te5 [GST] thin film , an active layer in this device, is utilized because it has the well-known property of rapid crystallization without phase separation in erasable compact discs industry.We investigated the difference of the character of the GST thin film with various sputtering methods. 100nm thick GST films were prepared with DC magnetron sputtering and RF magnetron sputtering for this experiment. XRF, XRD,SEM and four point probe measurement are used to analyze the electrical properties of these films.As for the composition of the DC sputtered GST films, Te was insufficient from target composition, while the composition of RF sputtered GST films were almost same as target composition. The RF sputtered GST films were composed of hcp by 400°C annealing. On the other hand, the DC sputtered films were mixed-phase of fcc and hcp. The resistivity of DC Sputtered GST films was higher than RF sputtered film cause of poor crystallinity. The uniformity of RF sputtered film was better than DC sputtered film.

The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications

CrystEngComm ◽  
2020 ◽  
Vol 22 (30) ◽  
pp. 5002-5009
Author(s):  
Zihan Zhao ◽  
Sicong Hua ◽  
Xiao Su ◽  
Bo Shen ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Memory

Titanium-doped SnSb4 phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

Preparation of Ge-Sb-Te Thin Films by Tellurization of Ge-Sb Thin Film for Phase-Change Random-Access Memory Application

2019 ◽  
Vol 8 (4) ◽  
pp. P298-P302 ◽  
Author(s):  
Byeol Han ◽  
Yewon Kim ◽  
Yu-Jin Kim ◽  
Mann-Ho Cho ◽  
Sa-Kyun Rha ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

SiO[sub 2] Incorporation Effects in Ge[sub 2]Sb[sub 2]Te[sub 5] Films Prepared by Magnetron Sputtering for Phase Change Random Access Memory Devices

2006 ◽  
Vol 9 (8) ◽  
pp. G259 ◽  
Author(s):  
Seung Wook Ryu ◽  
Jin Ho Oh ◽  
Byung Joon Choi ◽  
Sung-Yeon Hwang ◽  
Suk Kyoung Hong ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory

scholarly journals Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

2013 ◽  
Vol 103 (13) ◽  
pp. 133507 ◽  
Author(s):  
Chun Chia Tan ◽  
Luping Shi ◽  
Rong Zhao ◽  
Qiang Guo ◽  
Yi Li ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Nitrogen Doped
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