Characteristics of Nitrogen-Doped Antimony Telluride Thin Films for Phase-Change Random Access Memory

2012 ◽  
pp. 1119-1123
Author(s):  
Suyuan Bai ◽  
Changzhou Wang ◽  
Zhenan Tang ◽  
Zhengxing Huang
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Antimony Telluride ◽  
Access Memory ◽  
Nitrogen Doped

Investigation on the Scaling Performances of Carbon‐Doped Ge 2 Sb 2 Te 5 Thin Films for Phase Change Random Access Memory in a 40 nm Process

2019 ◽  
Vol 216 (22) ◽  
pp. 1900439
Author(s):  
Shuai Yan ◽  
Daolin Cai ◽  
Yuan Xue ◽  
Yifeng Chen ◽  
Yuanguang Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Carbon Doped

The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory

2009 ◽  
Vol 95 (11) ◽  
pp. 112110 ◽  
Author(s):  
Seung Wook Ryu ◽  
Jong Ho Lee ◽  
Young Bae Ahn ◽  
Choon Hwan Kim ◽  
Bong Seob Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Voltage ◽  
Access Memory ◽  
Threshold Switching

Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb2Te Thin Films for Phase Change Random Access Memory

2013 ◽  
Vol 367 ◽  
pp. 26-31
Author(s):  
Su Yuan Bai ◽  
Zhe Nan Tang ◽  
Zheng Xing Huang ◽  
Yi Feng Gu
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Thermal Conductivity ◽  
Phase Change ◽  
Composite Films ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Ge Doping

The Ge doped Sb2Te thin films (Ge2Sb2Te5, Ge0.15Sb2Te and Ge0.61Sb2Te) were deposited by magnetron co-sputtering using Ge and Sb2Te targets. Ge doping effect on the phase transition behaviors and thermal conductivity of the composite films was investigated. Ge0.61Sb2Te thin films have higher crystallization temperature (~200°C), larger crystallization activation energy (~3.28 eV) , better data retention (~120.8 °Cfor 10 years) and lower thermal conductivity (~0.23 W/mK). Ge0.61Sb2Te thin films is considered to be a promising storage medium for phase change random access memory due to its better thermal stability and lower power consumption.

The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications

CrystEngComm ◽  
2020 ◽  
Vol 22 (30) ◽  
pp. 5002-5009
Author(s):  
Zihan Zhao ◽  
Sicong Hua ◽  
Xiao Su ◽  
Bo Shen ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Memory

Titanium-doped SnSb4 phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

Dependency of threshold switching on density of localized states of Ge2Sb2Te5 thin films for phase change random access memory

2008 ◽  
Vol 93 (17) ◽  
pp. 172114 ◽  
Author(s):  
Seung Wook Ryu ◽  
Jong Ho Lee ◽  
Yong Bae Ahn ◽  
Choon Hwan Kim ◽  
Byung Joon Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Localized States ◽  
Access Memory ◽  
Threshold Switching ◽  
Density Of Localized States

Preparation of Ge-Sb-Te Thin Films by Tellurization of Ge-Sb Thin Film for Phase-Change Random-Access Memory Application

2019 ◽  
Vol 8 (4) ◽  
pp. P298-P302 ◽  
Author(s):  
Byeol Han ◽  
Yewon Kim ◽  
Yu-Jin Kim ◽  
Mann-Ho Cho ◽  
Sa-Kyun Rha ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory
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