Three dimensional finite element modeling and characterization of intermediate states in single active layer phase change memory devices

2015 ◽  
Vol 117 (21) ◽  
pp. 214302 ◽  
Author(s):  
I. Cinar ◽  
O. B. Aslan ◽  
A. Gokce ◽  
O. Dincer ◽  
V. Karakas ◽  
...  
Keyword(s):  
Finite Element ◽  
Finite Element Modeling ◽  
Phase Change ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Intermediate States ◽  
Dimensional Finite Element ◽  
Three Dimensional Finite Element ◽  
Change Memory

scholarly journals Confined-Chalcogenide Phase Change Memory with Thin Metal Interlayer for Low Reset Current by Finite Element Modeling

2009 ◽  
Vol 152-153 ◽  
pp. 399-402 ◽  
Author(s):  
S. Harnsoongnoen ◽  
Chiranut Sa-Ngiamsak ◽  
Apirat Siritaratiwat
Keyword(s):  
Finite Element ◽  
Finite Element Modeling ◽  
Phase Change ◽  
Heat Dissipation ◽  
Phase Change Memory ◽  
Thin Metal ◽  
Element Modeling ◽  
Reset Operation ◽  
Dimensional Finite Element ◽  
Change Memory

This paper reports on the confined-chalcogenide phase change memory with thin metal interlayer (CCTMI) with the operating reset current of 0.6mA-30ns. This cell offers low reset current with simple architecture and fabrication. Thermal and heat flux distribution of both the normal-bottom-contact (NBC) and a proposed CCTMI PCM cells were carefully analyzed and simulated by two-dimensional finite element modeling. It is intriguingly found that the reset operation current of the CCTMI cell is 44% lower than that of the NBC. CCTMI has capability to solve an over-programming fail issue due to confined heat dissipation in active area.

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