Confined-Chalcogenide Phase Change Memory with Thin Metal Interlayer for Low Reset Current by Finite Element Modeling
2009 ◽
Vol 152-153
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pp. 399-402
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Keyword(s):
This paper reports on the confined-chalcogenide phase change memory with thin metal interlayer (CCTMI) with the operating reset current of 0.6mA-30ns. This cell offers low reset current with simple architecture and fabrication. Thermal and heat flux distribution of both the normal-bottom-contact (NBC) and a proposed CCTMI PCM cells were carefully analyzed and simulated by two-dimensional finite element modeling. It is intriguingly found that the reset operation current of the CCTMI cell is 44% lower than that of the NBC. CCTMI has capability to solve an over-programming fail issue due to confined heat dissipation in active area.
2016 ◽
Vol 33
(9)
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pp. 098502
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2009 ◽
Vol 23
(17)
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pp. 3625-3630
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Keyword(s):
2009 ◽
Vol 26
(11)
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pp. 118101
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Keyword(s):