High-quality graphene grown on polycrystalline PtRh20 alloy foils by low pressure chemical vapor deposition and its electrical transport properties

2016 ◽  
Vol 108 (6) ◽  
pp. 063102 ◽  
Author(s):  
He Yang ◽  
Chengmin Shen ◽  
Yuan Tian ◽  
Lihong Bao ◽  
Peng Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Electrical Transport Properties ◽  
High Quality ◽  
Pressure Chemical

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Significant enhancement of the electrical transport properties of graphene films by controlling the surface roughness of Cu foils before and during chemical vapor deposition

Nanoscale ◽  
2014 ◽  
Vol 6 (21) ◽  
pp. 12943-12951 ◽  
Author(s):  
Dongmok Lee ◽  
Gi Duk Kwon ◽  
Jung Ho Kim ◽  
Eric Moyen ◽  
Young Hee Lee ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Sheet Resistance ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Significant Enhancement ◽  
Electrical Transport Properties ◽  
Graphene Films

Graphene resistivity decreases as the surface roughness of the copper foils decreases. Small grain polycrystalline graphene films grown on pre-annealed and electropolished copper exhibit a sheet resistance of 210 Ω □−1.

Process Optimization for Synthesis of High-Quality Graphene Films by Low-Pressure Chemical Vapor Deposition

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FD21 ◽  
Author(s):  
Dongheon Lee ◽  
Kihwan Lee ◽  
Saebyuk Jeong ◽  
Juhyun Lee ◽  
Bosik Choi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Optimization ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Graphene Films ◽  
Pressure Chemical

Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

2002 ◽  
Vol 80 (19) ◽  
pp. 3548-3550 ◽  
Author(s):  
Jae-Ryoung Kim ◽  
Hye Mi So ◽  
Jong Wan Park ◽  
Ju-Jin Kim ◽  
Jinhee Kim ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Electrical Transport Properties

High quality polysilicon by amorphous low pressure chemical vapor deposition

1983 ◽  
Vol 42 (3) ◽  
pp. 249-251 ◽  
Author(s):  
G. Harbeke ◽  
L. Krausbauer ◽  
E. F. Steigmeier ◽  
A. E. Widmer ◽  
H. F. Kappert ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical

scholarly journals High-Quality Doped Polycrystalline Silicon Using Low-Pressure Chemical Vapor Deposition (LPCVD)

2018 ◽  
Vol 150 ◽  
pp. 9-14 ◽  
Author(s):  
Pradeep Padhamnath ◽  
Naomi Nandakumar ◽  
Buatis Jammaal Kitz ◽  
Nagarajan Balaji ◽  
Marvic-John Naval ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical

Electrical transport properties of microcrystalline silicon grown by plasma enhanced chemical vapor deposition

2004 ◽  
Vol 96 (12) ◽  
pp. 7306-7311 ◽  
Author(s):  
Nicola Pinto ◽  
Marco Ficcadenti ◽  
Lorenzo Morresi ◽  
Roberto Murri ◽  
Giuseppina Ambrosone ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Electrical Transport Properties
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