Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC
2012 ◽
Vol 717-720
◽
pp. 105-108
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Keyword(s):
A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.
1997 ◽
Vol 15
(6)
◽
pp. 1902
◽
1995 ◽
Vol 10
(2)
◽
pp. 320-327
◽
Keyword(s):
Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition
1996 ◽
Vol 169
(3)
◽
pp. 485-490
◽
2012 ◽
Vol 51
(6S)
◽
pp. 06FD21
◽
Keyword(s):
2008 ◽
Vol 254
(19)
◽
pp. 6086-6089
◽
Keyword(s):
Keyword(s):
Keyword(s):
1997 ◽
Vol 15
(1)
◽
pp. 138
◽