Process-dependent thermal transport properties of silicon-dioxide films deposited using low-pressure chemical vapor deposition

1999 ◽  
Vol 85 (10) ◽  
pp. 7130-7134 ◽  
Author(s):  
Y. S. Ju ◽  
K. E. Goodson
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Thermal Transport ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Dioxide Films ◽  
Thermal Transport Properties ◽  
Pressure Chemical

Highly stable silicon dioxide films deposited by means of rapid thermal low‐pressure chemical vapor deposition onto InP

1991 ◽  
Vol 59 (20) ◽  
pp. 2552-2554 ◽  
Author(s):  
A. Katz ◽  
A. Feingold ◽  
U. K. Chakrabarti ◽  
S. J. Pearton ◽  
K. S. Jones
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Dioxide Films ◽  
Pressure Chemical

Low-pressure chemical vapor deposition of silicon dioxide using diethylsilane

1993 ◽  
Vol 5 (12) ◽  
pp. 1710-1714 ◽  
Author(s):  
R. A. Levy ◽  
J. M. Grow ◽  
G. S. Chakravarthy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Cyclic alkylsilanes as low-pressure chemical vapor deposition silicon dioxide precursors

1995 ◽  
Vol 263 (1) ◽  
pp. 117-121 ◽  
Author(s):  
Ravi Kumar Laxman ◽  
Arthur K. Hochberg ◽  
Hansong Cheng ◽  
David A. Roberts
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon and Silicon Dioxide By Rapid Thermal Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
Mehmet C. Öztürk ◽  
Jimmie J. Wortman ◽  
Yu-Lin Zhong ◽  
Xiao-Wei Ren ◽  
Roderick M. Miller ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Passivation Layers ◽  
Pressure Chemical ◽  
Reactive Gas

ABSTRACTLow-pressure chemical vapor deposition of polycrystalline silicon and silicon dioxide in a lampheated cold-wall rapid thermal processor have been investigated. Silicon dioxide films have been deposited by thermal decomposition of tetraethylorthosilicate known as TEOS. The technique can be used for rapid deposition of good quality thick passivation layers at moderate temperatures. Polycrystalline silicon depositions have been accomplished using silane (SiH4) diluted in argon as the reactive gas. Surface roughness and resistivity of the films deposited at temperatures above 700°C are comparable in quality to films deposited in a conventional LPCVD reactor at 610°C. In this temperature range, deposition rates as high as 4000Å/min can be obtained.

Sign in / Sign up

Export Citation Format

Share Document