scholarly journals Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

Author(s):  
R. Muhammad ◽  
Z. Othaman ◽  
Y. Wahab ◽  
Z. Ibrahim ◽  
S. Sakrani
2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).


2007 ◽  
Vol 515 (22) ◽  
pp. 8250-8253 ◽  
Author(s):  
Koji Ueda ◽  
Ryo Kizuka ◽  
Hisashi Takeuchi ◽  
Atsushi Kenjo ◽  
Taizoh Sadoh ◽  
...  

2017 ◽  
Vol 12 (2) ◽  
pp. 82-86 ◽  
Author(s):  
Dong Pan ◽  
Haibo Fan ◽  
Zan Li ◽  
Siyi Wang ◽  
Yinhao Huang ◽  
...  

2008 ◽  
Vol 232 (3) ◽  
pp. 585-588 ◽  
Author(s):  
M. POČUČA ◽  
Z. BRANKOVIĆ ◽  
G. BRANKOVIĆ ◽  
D. VASILJEVIĆ-RADOVIĆ

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