A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

2016 ◽  
Vol 108 (15) ◽  
pp. 153505 ◽  
Author(s):  
Tsung-Ling Tsai ◽  
Hsiang-Yu Chang ◽  
Jesse Jen-Chung Lou ◽  
Tseung-Yuen Tseng
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Bilayer Structure ◽  
Resistive Switching Memory ◽  
Switching Memory

Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure

2016 ◽  
Vol 37 (10) ◽  
pp. 1284-1287 ◽  
Author(s):  
Tsung-Ling Tsai ◽  
Fa-Shen Jiang ◽  
Chia-Hua Ho ◽  
Chen-Hsi Lin ◽  
Tseung-Yuen Tseng
Keyword(s):  
Resistive Switching ◽  
Bilayer Structure ◽  
Resistive Switching Memory ◽  
Conductive Bridge ◽  
Enhanced Properties ◽  
Switching Memory

High-performance resistive switching memory with embedded molybdenum disulfide quantum dots

2021 ◽  
Vol 118 (17) ◽  
pp. 172104
Author(s):  
Xinna Yu ◽  
Ke Chang ◽  
Anhua Dong ◽  
Zhikai Gan ◽  
Kang'an Jiang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molybdenum Disulfide ◽  
Resistive Switching ◽  
High Performance ◽  
Resistive Switching Memory ◽  
Switching Memory
Sign in / Sign up

Export Citation Format

Share Document