Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory

2020 ◽  
Vol 12 (27) ◽  
pp. 30538-30547
Author(s):  
Xing Li ◽  
Jian-Guo Yang ◽  
Hong-Ping Ma ◽  
Yu-Hang Liu ◽  
Zhi-Gang Ji ◽  
...  
2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 282-290 ◽  
Author(s):  
Hehe Zhang ◽  
Nabeel Aslam ◽  
Marcel Reiners ◽  
Rainer Waser ◽  
Susanne Hoffmann-Eifert

2019 ◽  
Vol 114 (18) ◽  
pp. 182102 ◽  
Author(s):  
Chandreswar Mahata ◽  
Min-Hwi Kim ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
Dong Keun Lee ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21736-21741 ◽  
Author(s):  
Kyuhyun Park ◽  
Jang-Sik Lee

Reliable resistive switching memory devices were developed by controlling the oxygen vacancies in aluminum oxide layer during atomic layer deposition and by adopting bilayer structures.


2017 ◽  
Vol 9 (15) ◽  
pp. 13286-13292 ◽  
Author(s):  
Konstantin V. Egorov ◽  
Dmitry S. Kuzmichev ◽  
Pavel S. Chizhov ◽  
Yuri Yu. Lebedinskii ◽  
Cheol Seong Hwang ◽  
...  

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


2012 ◽  
Vol 24 (7) ◽  
pp. 1255-1261 ◽  
Author(s):  
Xinyi Chen ◽  
Ekaterina Pomerantseva ◽  
Parag Banerjee ◽  
Keith Gregorczyk ◽  
Reza Ghodssi ◽  
...  

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