High-performance resistive switching memory with embedded molybdenum disulfide quantum dots

2021 ◽  
Vol 118 (17) ◽  
pp. 172104
Author(s):  
Xinna Yu ◽  
Ke Chang ◽  
Anhua Dong ◽  
Zhikai Gan ◽  
Kang'an Jiang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molybdenum Disulfide ◽  
Resistive Switching ◽  
High Performance ◽  
Resistive Switching Memory ◽  
Switching Memory

Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots

2019 ◽  
Vol 114 (18) ◽  
pp. 181103 ◽  
Author(s):  
Zhiliang Chen ◽  
Yating Zhang ◽  
Yu Yu ◽  
Mingxuan Cao ◽  
Yongli Che ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Perovskite Quantum Dots ◽  
Switching Memory

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

2016 ◽  
Vol 108 (15) ◽  
pp. 153505 ◽  
Author(s):  
Tsung-Ling Tsai ◽  
Hsiang-Yu Chang ◽  
Jesse Jen-Chung Lou ◽  
Tseung-Yuen Tseng
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Bilayer Structure ◽  
Resistive Switching Memory ◽  
Switching Memory
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