Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

10.1063/1.4948765 ◽

2016 ◽

Vol 108 (18) ◽

pp. 182104 ◽

Cited By ~ 12

Author(s):

Eungtaek Kim ◽

Choong-Ki Kim ◽

Myung Keun Lee ◽

Tewook Bang ◽

Yang-Kyu Choi ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Gate Insulator ◽

Oxide Thin Film ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

10.1063/1.4813747 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033501 ◽

Cited By ~ 52

Author(s):

Jae Gwang Um ◽

Mallory Mativenga ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Negative Bias ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

10.1063/1.4902867 ◽

2014 ◽

Vol 105 (21) ◽

pp. 213505 ◽

Cited By ~ 17

Author(s):

Kwang-Won Jo ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Microwave Irradiation ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2bilayer passivation under gate bias stress

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.02bc17 ◽

2016 ◽

Vol 55 (2S) ◽

pp. 02BC17 ◽

Cited By ~ 4

Author(s):

Ching-Lin Fan ◽

Fan-Ping Tseng ◽

Bo-Jyun Li ◽

Yu-Zuo Lin ◽

Shea-Jue Wang ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Gate Bias Stress

Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

Journal of Applied Physics ◽

10.1063/1.3662869 ◽

2011 ◽

Vol 110 (11) ◽

pp. 114503 ◽

Cited By ~ 37

Author(s):

Md Delwar Hossain Chowdhury ◽

Sang Hyun Ryu ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Annealing Time ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Chinese Physics B ◽

10.1088/1674-1056/24/7/077307 ◽

2015 ◽

Vol 24 (7) ◽

pp. 077307 ◽

Cited By ~ 2

Author(s):

Hui-Min Qian ◽

Guang Yu ◽

Hai Lu ◽

Chen-Fei Wu ◽

Lan-Feng Tang ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Temperature Dependent ◽

Bias Stress ◽

Electrical Instability ◽

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

10.1063/1.4752238 ◽

2012 ◽

Vol 101 (12) ◽

pp. 123502 ◽

Cited By ~ 84

Author(s):

Piero Migliorato ◽

Md Delwar Hossain Chowdhury ◽

Jae Gwang Um ◽

Manju Seok ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Negative Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

10.1063/1.3580611 ◽

2011 ◽

Vol 98 (15) ◽

pp. 153511 ◽

Cited By ~ 94

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

P-139L:Late-News Poster: AC Gate-Drain-Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications

SID Symposium Digest of Technical Papers ◽

10.1002/j.2168-0159.2012.tb05991.x ◽

2012 ◽

Vol 43 (1) ◽

pp. 1126-1128 ◽

Cited By ~ 1

Author(s):

Chao-Yu Yang ◽

Shih-Che Huang ◽

Hao-Lin Chiu ◽

Ting Hsieh ◽

Bo-Liang Yeh ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Stress Study ◽

Drain Bias ◽

Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

10.1063/1.3357431 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102107 ◽

Cited By ~ 109

Author(s):

Sang-Yun Sung ◽

Jun Hyuk Choi ◽

Un Bin Han ◽

Ki Chang Lee ◽

Joon-Hyung Lee ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Ambient Atmosphere ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽