Spin injection and detection in p-Si channel using highly spin polarized Heusler alloy Co45Ni5Cr25Al25/MgO tunnel contact

2017 ◽  
Author(s):  
Uddipta Kar ◽  
J. Panda ◽  
T. K. Nath
Keyword(s):  
Heusler Alloy ◽  
Spin Injection ◽  
Tunnel Contact ◽  
Spin Polarized ◽  
Spin Injection And Detection

scholarly journals Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy

2016 ◽  
Vol 9 (6) ◽  
pp. 063006 ◽  
Author(s):  
Takehiro Yamaguchi ◽  
Rai Moriya ◽  
Soichiro Oki ◽  
Shinya Yamada ◽  
Satoru Masubuchi ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Spin Injection ◽  
Multilayer Graphene ◽  
Spin Polarized

scholarly journals Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

2021 ◽  
Vol 8 ◽  
Author(s):  
Nilay Maji ◽  
Subhasis Shit ◽  
T. K. Nath
Keyword(s):  
Room Temperature ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Injection ◽  
Spin Accumulation ◽  
Injection Model ◽  
Tunnel Contact ◽  
Current Voltage ◽  
Spin Polarized ◽  
Junction Structure

In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been performed experimentally. The electronic and magneto-transport characteristics have been explored in the temperature range of 100–300 K. The current-voltage (I-V) characteristics of the heterojunction have been recorded, which displayed an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The application of an external magnetic field parallel to the plane of the NZFO film causes the current (I) across the junction to decrease, clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The root of displaying positive magnetoresistance in our heterojunction has been well justified using the standard spin injection model. The electrical injection of spin-polarized carriers and its accumulation and detection in a p-Si channel have been demonstrated using the NZFO/MgO tunnel contact using a three-terminal (3-T) Hanle device. The parameters such as spin lifetime (99 ps), spin diffusion length (276 nm), and spin polarization (0.44) have been estimated from the Hanle curve detected in our heterostructure at room temperature, making the Ni0.65Zn0.35Fe2O4/MgO/p-Si device a very favorable promising junction structure in the field of spintronics for several device appliances in the future.

Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection

2010 ◽  
Vol 97 (2) ◽  
pp. 022105 ◽  
Author(s):  
Kun-Rok Jeon ◽  
Byoung-Chul Min ◽  
Hun-Sung Lee ◽  
Il-Jae Shin ◽  
Chang-Yup Park ◽  
...  
Keyword(s):  
Spin Injection ◽  
Single Crystalline ◽  
Tunnel Contact ◽  
Area Product ◽  
Spin Injection And Detection

scholarly journals Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves

2016 ◽  
Vol 94 (23) ◽  
Author(s):  
T. A. Peterson ◽  
S. J. Patel ◽  
C. C. Geppert ◽  
K. D. Christie ◽  
A. Rath ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Room Temperature ◽  
Spin Injection ◽  
Spin Valves ◽  
Spin Injection And Detection

Spin Injection into Graphene from Heusler Alloy Co2MnGe (111) Surface: A First Principles Study

2018 ◽  
Vol 914 ◽  
pp. 111-116 ◽  
Author(s):  
Ya Xin Wang ◽  
Tong Sheng Xia
Keyword(s):  
First Principles ◽  
Heusler Alloy ◽  
Spin Injection ◽  
Ferromagnetic Material ◽  
Nonequilibrium State ◽  
Tunnel Barrier ◽  
Injection Efficiency ◽  
Spintronic Devices ◽  
First Principles Study ◽  
Spin Polarized

To obtain a larger spin signal for use in graphene-based spintronic devices, the spin injection efficiency needs to be enhanced. Previously researchers can increase the efficiency by inserting a tunnel barrier such as Al2O3or MgO between ferromagnet and graphene. However, the key value in spin transport is still very low because of the conductance mismatch as well as the limit to fabricate a high-quality tunnel barrier at the junction surface. Here we use a highly spin-polarized ferromagnetic material—Heusler alloy Co2MnGe as a substitutional scheme without the tunnel barrier. The spin injection efficiency of our Co2MnGe (111)/graphene junction can be as high as 73% which is much higher than 1% of ferromagnet/graphene or 30% of ferromagnet/oxide/graphene using first-principles study. The large spin polarization can be explicated by analyzing the transmission spectrum at the nonequilibrium state.

scholarly journals Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al2O3 spin injection and detection barriers

2015 ◽  
Vol 252 (11) ◽  
pp. 2395-2400 ◽  
Author(s):  
Marc Drögeler ◽  
Frank Volmer ◽  
Maik Wolter ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Spin Injection ◽  
Atomic Layer ◽  
Bilayer Graphene ◽  
Spin Valves ◽  
Bottom Up ◽  
Spin Injection And Detection
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