scholarly journals Stacking fault density and bond orientational order of fcc ruthenium nanoparticles

2017 ◽  
Vol 111 (25) ◽  
pp. 253101 ◽  
Author(s):  
Okkyun Seo ◽  
Osami Sakata ◽  
Jae Myung Kim ◽  
Satoshi Hiroi ◽  
Chulho Song ◽  
...  
1993 ◽  
Vol 3 (8) ◽  
pp. 1873-1888 ◽  
Author(s):  
M. Maret ◽  
F. Lançon ◽  
L. Billard

1991 ◽  
Vol 66 (17) ◽  
pp. 2270-2273 ◽  
Author(s):  
D. G. Grier ◽  
C. A. Murray ◽  
C. A. Bolle ◽  
P. L. Gammel ◽  
D. J. Bishop ◽  
...  

1993 ◽  
Vol 321 ◽  
Author(s):  
M. Li ◽  
W. L. Johnson ◽  
W. A. Goddard

ABSTRACTThermodynamic properties, structures, defects and their configurations of a two-dimensional Lennard-Jones (LJ) system are investigated close to crystal to glass transition (CGT) via molecular dynamics simulations. The CGT is achieved by saturating the LJ binary arrays below glass transition temperature with one type of the atoms which has different atomic size from that of the host atoms. It was found that for a given atomic size difference larger than a critical value, the CGT proceeds with increasing solute concentrations in three stages, each of which is characterized by distinct behaviors of translational and bond-orientational order correlation functions. An intermediate phase which has a quasi-long range orientational order but short range translational order has been found to exist prior to the formation of the amorphous phase. The destabilization of crystallinity is observed to be directly related to defects. We examine these results in the context of two dimensional (2D) melting theory. Finite size effects on these results, in particular on the intermediate phase formation, are discussed.


2017 ◽  
Vol 96 (16) ◽  
Author(s):  
Rawa Tanta ◽  
Caroline Lindberg ◽  
Sebastian Lehmann ◽  
Jessica Bolinsson ◽  
Miguel R. Carro-Temboury ◽  
...  

2018 ◽  
Vol 924 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Gil Yong Chung ◽  
Edward Sanchez ◽  
Yu Yang ◽  
Jian Qiu Guo ◽  
...  

Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26% and 14%, respectively, while stacking faults were nearly eliminated from wafers produced using the refined process. These quality enhancements corresponded to an adjustment to key thermal parameters predicted to control intrinsic crystal stresses, and a reduction in crystal dome curvature.


1986 ◽  
Vol 47 (4) ◽  
pp. 701-709 ◽  
Author(s):  
S. Garoff ◽  
H.W. Deckman ◽  
J.H. Dunsmuir ◽  
M.S. Alvarez ◽  
J.M. Bloch

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