Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy
2011 ◽
Vol 315
(1)
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pp. 1-4
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2002 ◽
Vol 41
(Part 1, No. 4B)
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pp. 2489-2492
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Keyword(s):
Keyword(s):
2011 ◽
Vol 314
(1)
◽
pp. 252-257
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2021 ◽
Keyword(s):
Keyword(s):