P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2489-2492 ◽  
Author(s):  
Chih-Hsin Ko ◽  
Yan-Kuin Su ◽  
Shoou-Jinn Chang ◽  
Ta-Ming Kuan ◽  
Chung-I Chiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Organic Vapor ◽  
Metal Organic

Intersubband Transition at 1.52 µm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy

2009 ◽  
Vol 2 ◽  
pp. 061002 ◽  
Author(s):  
Hassanet Sodabanlu ◽  
Jung-Seung Yang ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transition ◽  
Organic Vapor ◽  
Metal Organic

Group III nitrides grown on 4H-SiC (3038) substrate by metal-organic vapor phase epitaxy

2004 ◽  
Vol 831 ◽  
Author(s):  
Akira Honshio ◽  
Tsukasa Kitano ◽  
Masataka Imura ◽  
Yasuto Miyake ◽  
Hideki Kasugai ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Growth Pressure ◽  
Organic Vapor ◽  
Metal Organic

ABSTRACTThe heteroepitaxial growth of a GaN single crystal by metal-organic vapor phase epitaxy on a 4H-SiC (3038) substrate was demonstrated. The crystallographic orientation of GaN was found to be dependent on growth pressure. When the growth pressure was 1000 hPa, the orientation of the GaN single crystal was consistent with that of the SiC substrate, where the c-plane of the GaN was single crystal tilted 54.7° from the surface plane. Then, we fabricated a violet-light-emitting diode (LED) with a GaInN multiple-quantum-well (QW) active layer grown on the GaN layer, which coherently grew on the 4H-SiC (3038 ) substrate. The blue shift of the peak wavelength with increasing injection current of up to 100 mA was confirmed to be two times smaller than that of a conventional LED on a c-plane sapphire substrate due to a low internal polarization.

scholarly journals Investigation of the Electro-Optical Characteristics of GaAs/AlGaAs Multiple Quantum Well Grown by Metal Organic Vapor Phase Epitaxy

2021 ◽  
Author(s):  
Aslan Turkoglu ◽  
Yüksel Ergun
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electric Fields ◽  
Vapor Phase ◽  
Theoretical Calculations ◽  
Energy Levels ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Organic Vapor ◽  
Metal Organic

Abstract In this study, the photoluminescence measurements of GaAs/AlGaAs multi-quantum-wells heterojunction structure grown on n+-GaAs substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) method are investigated. By dropping 5145 Å wavelength laser light on the sample at room temperature and low temperatures, the transitions between the bands in the structure and the changes in these transitions under the different electric fields and temperatures are observed. In addition, by making theoretically developed self-consistent potential calculations, the subband energy levels and their corresponding wave functions of the structure under the electric field and without the electric field are calculated. The obtained numerical results were found to be in full agreement with the experimental measurements and theoretical calculations.

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