scholarly journals Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules

2018 ◽  
Vol 124 (19) ◽  
pp. 195702 ◽  
Author(s):  
Manjari Garg ◽  
Tejas Rajendra Naik ◽  
Ravi Pathak ◽  
Valipe Ramgopal Rao ◽  
Che-Hao Liao ◽  
...  
Keyword(s):  
Organic Molecules ◽  
Surface Passivation ◽  
Gan Hemt ◽  
Passivation Process ◽  
Effect Of Surface

Effect of Surface Passivation and Substrate on Proton Irradiated AlGaN/GaN HEMT Transport Properties

2017 ◽  
Vol 6 (11) ◽  
pp. S3060-S3062 ◽  
Author(s):  
J. C. Gallagher ◽  
T. J. Anderson ◽  
A. D. Koehler ◽  
N. A. Mahadik ◽  
A. Nath ◽  
...  
Keyword(s):  
Transport Properties ◽  
Surface Passivation ◽  
Gan Hemt ◽  
Effect Of Surface

ZnO Nanoparticles, Nanorods, Hexagonal Plates and Nanosheets Produced by Polyol Route and the Effect of Surface Passivation by Acetate Molecules on Optical Properties

2019 ◽  
Vol 48 (10) ◽  
pp. 6437-6445
Author(s):  
Eduardo F. Barbosa ◽  
Jaqueline A. Coelho ◽  
Edna R. Spada ◽  
Daniel R. B. Amorim ◽  
Livia M. C. Souza ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Nanoparticles ◽  
Surface Passivation ◽  
Effect Of Surface

Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes

2017 ◽  
Vol 71 (10) ◽  
pp. 707-710 ◽  
Author(s):  
In Ho Kang ◽  
Moon Kyong Na ◽  
Ogyun Seok ◽  
Jeong Hyun Moon ◽  
H. W. Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Surface Passivation ◽  
Schottky Barrier Diodes ◽  
Effect Of Surface

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

2007 ◽  
Vol 298 ◽  
pp. 826-830 ◽  
Author(s):  
M.-A. di Forte Poisson ◽  
N. Sarazin ◽  
M. Magis ◽  
M. Tordjman ◽  
E. Morvan ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Gan Hemt

Effect of surface passivation on optical and electronic properties of ultrathin silicon nanosheets

2012 ◽  
Vol 55 (6) ◽  
pp. 1469-1474 ◽  
Author(s):  
Le Wang ◽  
Ke Wu ◽  
QianMin Dong ◽  
XiaoYan Li ◽  
SiYu Xiong ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Passivation ◽  
Optical And Electronic Properties ◽  
Effect Of Surface

EFFECT OF SURFACE PASSIVATION ON CAPACITANCE–VOLTAGE CHARACTERISTICS OF Sn/p-Si SCHOTTKY CONTACTS

2011 ◽  
Vol 25 (04) ◽  
pp. 531-542
Author(s):  
CABİR TEMİRCİ ◽  
BAHRI BATI
Keyword(s):  
Chemical Treatment ◽  
Room Temperature ◽  
Surface Passivation ◽  
Anodic Oxide ◽  
Treatment Method ◽  
Schottky Contacts ◽  
Metal Insulator ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Effect Of Surface

We have fabricated the Sn/p-Si Schottky barrier diodes with the interfacial layer metal–insulator–semiconductor (D-MIS) and the surface passivation metal–semiconductor MS (D-MS) by the anodization or chemical treatment method. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the devices were measured at room temperature. We obtained that the excess capacitance (C0) value of the MIS Sn/p-Si diode with the anodic oxide layer of 16.88 pF and 0.12 pF for the MS Sn/p-Si ideal diode with the surface passivation by the anodization or chemical treatment method from reverse bias C–V characteristics. Thus, we have succeeded to diminish the excess capacitance value to the limit of 0.12 pF for the MS Sn/p-Si diode by using the anodization or chemical treatment method.

Temperature dependence of surface photovoltage of bulk semiconductors and the effect of surface passivation

2000 ◽  
Vol 77 (26) ◽  
pp. 4383-4385 ◽  
Author(s):  
Shouvik Datta ◽  
M. R. Gokhale ◽  
A. P. Shah ◽  
B. M. Arora ◽  
Shailendra Kumar
Keyword(s):  
Temperature Dependence ◽  
Surface Passivation ◽  
Surface Photovoltage ◽  
Bulk Semiconductors ◽  
Effect Of Surface
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