scholarly journals Nonequilibrium vibrational population and donor-acceptor vibrations affecting rates of radiationless transitions

2019 ◽  
Vol 150 (7) ◽  
pp. 074504 ◽  
Author(s):  
Dmitry V. Matyushov
1980 ◽  
Vol 41 (7) ◽  
pp. 707-712 ◽  
Author(s):  
A. Poure ◽  
G. Aguero ◽  
G. Masse ◽  
J.P. Aicardi

2008 ◽  
Author(s):  
Derck Schlettwein ◽  
Robin Knecht ◽  
Dominik Klaus ◽  
Christopher Keil ◽  
Günter Schnurpfeil

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.


Sign in / Sign up

Export Citation Format

Share Document