Analysis of time-resolved donor-acceptor-pair spectra of ZnSe : Li and ZnSe : N

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 531-535
Author(s):  
P Bäume
Keyword(s):  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

scholarly journals On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation

2001 ◽  
Vol 6 ◽  
Author(s):  
F. Shahedipour ◽  
B.W. Wessels
Keyword(s):  
Luminescence Intensity ◽  
Random Distribution ◽  
Blue Emission ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Shallow Acceptors ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Time Resolved Photoluminescence

The decay dynamics of the 2.8 eV emission band in p-type GaN was investigated using time-resolved photoluminescence spectroscopy. The luminescence intensity decays non-exponentially. The decay dynamics were consistent with donor-acceptor pair recombination for a random distribution of pair distances. Calculations using the Thomas-Hopfield model indicated that recombination involves deep donors and shallow acceptors.

Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg

2001 ◽  
Vol 228 (2) ◽  
pp. 379-383 ◽  
Author(s):  
S. Strauf ◽  
S.M. Ulrich ◽  
P. Michler ◽  
J. Gutowski ◽  
T. B�ttcher ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

1995 ◽  
Vol 378 ◽  
Author(s):  
B. K. Meyer ◽  
D. Volm ◽  
C. Wetzel ◽  
L. Eckey ◽  
J.-Ch. Holst ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Photoluminescence Spectroscopy ◽  
Epitaxial Layers ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Sapphire Substrates ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Time Resolved Photoluminescence

AbstractFree and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photoluminescence measurements at low temperatures. Lifetimes are determined for the donor bound exciton at 3.4722eV and for two acceptor bound excitons with energies of 3.4672eV and 3.459eV. Luminescences between 3.29eV and 3.37eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface.

Time-resolved donor-acceptor pair recombination luminescence in highly n- and p-doped II–VI semiconductors

1994 ◽  
Vol 138 (1-4) ◽  
pp. 815-819 ◽  
Author(s):  
Ch. Friske ◽  
R. Heitz ◽  
B. Lummer ◽  
V. Kutzer ◽  
A. Hoffmann ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Recombination Luminescence ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Analysis of time-resolved donor—acceptor-pair spectra of ZnSe : Li and ZnSe : N

1998 ◽  
Vol 184-185 ◽  
pp. 531-535 ◽  
Author(s):  
P. Bäume ◽  
S. Strauf ◽  
J. Gutowski ◽  
M. Behringer ◽  
D. Hommel
Keyword(s):  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

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