Detection of alpha particles from 7Li(p,α)4He and 19F(p,α)16O reactions induced by laser-accelerated protons using CR-39 with potassium hydroxide–ethanol–water etching solution

2019 ◽  
Vol 90 (8) ◽  
pp. 083307 ◽  
Author(s):  
Yosuke Nishiura ◽  
Shunsuke Inoue ◽  
Sadaoki Kojima ◽  
Kensuke Teramoto ◽  
Yuki Furukawa ◽  
...  
2018 ◽  
Vol 16 (37) ◽  
pp. 108-117
Author(s):  
Khalid R. Flyah

The present work determines the particle size based only on the number of tracks detected in a cluster created by a hot particle on the CR-39 solid state nuclear track detector and depending on the exposure time. The mathematical model of the cross section developed here gives the relationship between alpha particle emitting from the (n, α) reaction and the number of tracks created and distribution of tracks created on the surface of the track detector. In an experiment performed during this work, disc of boron compound (boric acid or sodium tetraborate) of different weights were prepared and exposed to thermal neutron from the source. Chemical etching is processes of path formation in the detector, during which a suitable etching solution attacks the detector at a sufficient speed and the damaged regions along the ion trails (latent track) are preferentially dissolved, removed and get transformed into a hollow channel. The most common etching for plastics is the aqueous solutions of NaOH and temperatures in between 50˚C - 80˚C.The program (CR-39) processing counting and calculations only take place depending on the number of tracks.


1917 ◽  
Vol s4-44 (259) ◽  
pp. 69-72 ◽  
Author(s):  
H. J. Vennes
Keyword(s):  

Author(s):  
Ahmed Elkhebu ◽  
◽  
Adnan Zainorabidin ◽  
Ismail Hj. Bakar ◽  
Bujang B. K. Huat ◽  
...  

Author(s):  
Lori L. Sarnecki

Abstract This paper presents two new methods using potassium hydroxide (KOH) as a wet etch technique to successfully stop on gate oxide and find the submicron gate oxide failures that correspond to failure response sites. Applications of this new technique to submicron gate oxide failures on both planar and deep trench MOSFET devices are reported in this paper.


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