High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

2019 ◽  
Vol 115 (7) ◽  
pp. 072105 ◽  
Author(s):  
Yachao Zhang ◽  
Rui Guo ◽  
Shengrui Xu ◽  
Jincheng Zhang ◽  
Shenglei Zhao ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Composite Channel ◽  
Electron Mobility Transistors

High Performance CuMetallized GaAs HEMTs Processing and Reliability

1998 ◽  
Vol 535 ◽  
Author(s):  
T. Feng ◽  
A. Dimoulas ◽  
N. Strifas ◽  
A. Christou
Keyword(s):  
Elevated Temperature ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Comparable Performance ◽  
Gate Resistance

AbstractAlGaAs/GaAs based high electron mobility transistors (HEMTs) with Cu/Ti metallized gates have been fabricated. Copper gates were used to achieve low gate resistance and to minimize the hydrogen induced device degradation. The DC measurement of the processed AlGaAs/GaAs HEMTs with Cu/Ti gates shows comparable performance to similar Au based GaAs HEMTs. The Cu-based HEMTs were also subjected to elevated temperature testing under 5% H2 –N2 forming gas up to 250°C and 8 hours and no degradation due to hydrogen effects was found.

Sign in / Sign up

Export Citation Format

Share Document