High-Performance Enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based Source Contact Ledge and Two-Step Fluorine Treatment
2013 ◽
Vol 52
(8S)
◽
pp. 08JN02
◽
2000 ◽
Vol 18
(3)
◽
pp. 1642
◽
2015 ◽
Vol 764-765
◽
pp. 486-490