High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels

2018 ◽  
Vol 113 (23) ◽  
pp. 233503 ◽  
Author(s):  
Yachao Zhang ◽  
ZhiZhe Wang ◽  
Rui Guo ◽  
Ge Liu ◽  
Shengrui Xu ◽  
...  
Keyword(s):  
Strong Coupling ◽  
Electron Mobility ◽  
High Performance ◽  
Coupling Effect ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Strong Coupling Effect ◽  
Double Channel

Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors

2013 ◽  
Vol 113 (17) ◽  
pp. 174503 ◽  
Author(s):  
Kai Zhang ◽  
JunShuai Xue ◽  
MengYi Cao ◽  
LiYuan Yang ◽  
YongHe Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Double Channel

High Performance CuMetallized GaAs HEMTs Processing and Reliability

1998 ◽  
Vol 535 ◽  
Author(s):  
T. Feng ◽  
A. Dimoulas ◽  
N. Strifas ◽  
A. Christou
Keyword(s):  
Elevated Temperature ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Comparable Performance ◽  
Gate Resistance

AbstractAlGaAs/GaAs based high electron mobility transistors (HEMTs) with Cu/Ti metallized gates have been fabricated. Copper gates were used to achieve low gate resistance and to minimize the hydrogen induced device degradation. The DC measurement of the processed AlGaAs/GaAs HEMTs with Cu/Ti gates shows comparable performance to similar Au based GaAs HEMTs. The Cu-based HEMTs were also subjected to elevated temperature testing under 5% H2 –N2 forming gas up to 250°C and 8 hours and no degradation due to hydrogen effects was found.

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