Bipolar resistive switching behaviour of WS2 thin films grown by chemical vapour deposition

2019 ◽  
Author(s):  
Ujjal Das ◽  
Barnali Mahato ◽  
Pranab Kumar Sarkar ◽  
Asim Roy
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Resistive Switching ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Bipolar Resistive Switching ◽  
Switching Behaviour

scholarly journals Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22199-22205
Author(s):  
Rachel L. Wilson ◽  
Thomas J. Macdonald ◽  
Chieh-Ting Lin ◽  
Shengda Xu ◽  
Alaric Taylor ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hole Transport ◽  
Blocking Layer ◽  
The Novel ◽  
Electron Blocking Layer

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.

Ar stabilisation of the cubic/tetragonal phases of ZrO2 in thin films prepared by ion beam induced chemical vapour deposition

2001 ◽  
Vol 389 (1-2) ◽  
pp. 34-42 ◽  
Author(s):  
J.P Holgado ◽  
J.P Espinós ◽  
F Yubero ◽  
A Justo ◽  
M Ocaña ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Ion Beam ◽  
Chemical Vapour

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Vacuum ◽  
2021 ◽  
Vol 189 ◽  
pp. 110253
Author(s):  
Yujia Jiao ◽  
Qian Jiang ◽  
Junhua Meng ◽  
Jinliang Zhao ◽  
Zhigang Yin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical
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